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Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFN44N100P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1000V
37A
220 m Ω
300 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
1000
1000
± 30
± 40
V
V
V
V
G
S
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
37
110
22
A
A
A
G = Gate
S = Source
D
D = Drain
S
E AS
dV/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
2
20
890
-55 ... +150
150
-55 ... +150
300
J
V/ns
W
° C
° C
° C
° C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
V ISOL
M d
50/60 Hz, RMS
I ISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Weight
30
g
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS = 0V, I D = 3mA
1000
V
Applications
V GS(th)
V DS = V GS , I D = 1mA
3.5
6.5
V
I GSS
V GS = ± 30V, V DS = 0V
± 200
nA
Switched-mode and resonant-mode
power supplies
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 22A, Note 1
T J = 125 ° C
50 μ A
3 mA
220 m Ω
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
? 2008 IXYS CORPORATION, All rights reserved
DS99879A(4/08)
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